Ninox 640II
Features
- VIS-SWIR InGaAs technology : Enables imaging from 0.6μm to 1.7μm.
- Cooled to -15°C : Allows longer integration avoiding dark current build-up.
- Ultra-Low Noise Sensor : 18e- in High Gain : Enables ultimate low light Vis-SWIR image.
- 15µm x 15µm pixel pitch : Enables the highest resolution SWIR image.
- Ultra high intrascene dynamic range : Enables simultaneous capture of bright & dark portions of a scene.
- Onboard Automated Gain Control (AGC) : Enables clear video in all light conditions.
- Ultra compact, Low power : Ideal for hand-held, mobile or airborne systems.
Specifications
| Ninox 640II | |
| Sensor Type | InGaAs PIN-Photodiode |
|---|---|
| Active Pixel | 640 x 512 |
| Pixel Pitch | 15µm x 15µm |
| Active Area | 9.6mm x 7.68mm |
| Spectral Response1 | 0.6µm to 1.7µm |
| Readout Noise (RMS) | LG：<175e- (150e- typical) HG：<22e- (18e- typical) |
| Peak Quantum Efficiency | >90% @ 1.3μm |
| Pixel Well Depth (FWC) | LG：>250ke- HG：10ke- |
| Dark Current (e/p/s) | <3,000 @-15°C (1,500 typical) |
| Pixel Operability | >99.5% |
| Sensor Type | InGaAs PIN-Photodiode |
Applications
Astronomy
Beam Profiling
NIR-II Imaging
Fluorescence
Hyperspectral Imaging
Semiconductor Inspection
Solar Cell Inspection
Thermography
Added to your inquiry
Ninox 640II
Ninox 640II